LI RESEARCH GROUP at NTUEE

Laboratory for Quantum Devices in Future Computing

Welcome to Li Group!

The Li group (Quantum Electronics Laboratory, QEL) focuses on materials physics and devices at quantum scale, using epitaxy tools such as atomic layer deposition (ALD), chemical vapor deposition (CVD), or molecular beam epitaxy (MBE) to extend the technological boundaries in the areas of energy and computing. We are working on several specific research areas: (i) post-Si channel materials including transitional metal dichalcogenides (TMDs, e.g. MoTe2, WTe2, etc.) and GeSn thin films for MOSFET applications, (ii) quantum devices such as tunnel diodes and tunnel FETs for low power applications, and (iii) carrier quantum transport and spin manipulations in two-dimensional electron/hole gases (e.g. Si/SiGe, Ge/GeSi, GeSn/Ge, InAs/GaSb, van der Waals heterostructures, etc.).

Computing

Moore's law is going to end sooner or later. However, the demand for future computing is only getting higher. We focus on the More-Moore and More-than-Moore devices to extend Moore's law.

Spinctronics

The development of conventional computing devices has been at its pinnacle. Low-power and high-performance needs drive spin-based computing devices such as spin-FET or quantum computing.

Materials

Epitaxial growth of nanoelectronic devices at nano (or atomic scale) can be done by atomic layer deposition (ALD), molecular beam epitaxy (MBE), and chemical vapor deposition (CVD).

Optoelectronics

Si photonics has been limited by its nature of indirect bandgap. Recently, GeSn (Sn > 8 ~ 11 %) of direct bandgap was demonstrated, opening up a potential Si-based optoelectronic circuit platform.